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1N60ZG-T92-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 1N60ZG-T92-R
功能描述  1.2A, 600V N-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N60ZG-T92-R 数据表(HTML) 2 Page - Unisonic Technologies

  1N60ZG-T92-R Datasheet HTML 1Page - Unisonic Technologies 1N60ZG-T92-R Datasheet HTML 2Page - Unisonic Technologies 1N60ZG-T92-R Datasheet HTML 3Page - Unisonic Technologies 1N60ZG-T92-R Datasheet HTML 4Page - Unisonic Technologies 1N60ZG-T92-R Datasheet HTML 5Page - Unisonic Technologies 1N60ZG-T92-R Datasheet HTML 6Page - Unisonic Technologies  
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1N60Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-724.C
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 2)
IDM
4.8
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
50
mJ
Repetitive (Note 2)
EAR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TA=25℃)
TO-92
PD
1
W
TO-252
1.5
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-92
θJA
140
℃
/W
TO-252
100
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS=20V, VDS=0V
+5
μA
Reverse
VGS=-20V, VDS=0V
-5
μA
Breakdown Voltage Temperature Coefficient △BVDSS/T
△ J ID=250μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.6A
9.3
11.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
120
150
pF
Output Capacitance
COSS
20
25
pF
Reverse Transfer Capacitance
CRSS
3.0
4.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
5
20
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
7
25
ns
Turn-Off Fall Time
tF
25
60
ns
Total Gate Charge
QG
VDS=480V, VGS=10V,
ID=1.2A (Note 2,3)
5.0
6.0
nC
Gate-Source Charge
QGS
1.0
nC
Gate-Drain Charge
QGD
2.6
nC



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