2N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-053.P

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Drain Current

Continuous

2.0

A

Pulsed (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

140

mJ

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/ TO-262

(

54

W

TO-220F/TO-220F1

23

W

TO-251/TO-251L/TO-252

44

W

TO-126

40

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/ TO-262

62.5

°С/W

TO-220F/TO-220F1

62.5

°С/W

TO-251/TO-251L/TO-252

100

°С/W

TO-126

89

°С/W

Junction to Case

TO-220/ TO-262

2.32

°С/W

TO-220F/TO-220F1

5.5

°С/W

TO-251/TO-251L/TO-252

2.87

°С/W

TO-126

3.12

°С/W