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2N80L-TM3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 2N80L-TM3-R
功能描述  2A, 800V N-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N80L-TM3-R 数据表(HTML) 3 Page - Unisonic Technologies

  2N80L-TM3-R Datasheet HTML 1Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 2Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 3Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 4Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 5Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 6Page - Unisonic Technologies  
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2N80
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-480.C
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=640V,
ID=2.4A (Note 1,2)
12
15
nC
Gate to Source Charge
QGS
2.6
nC
Gate to Drain Charge
QGD
6.0
nC
Turn-ON Delay Time
tD(ON)
VDD=400V, ID=2.4A,
RG=25Ω (Note 1,2)
12
35
ns
Rise Time
tR
30
70
ns
Turn-OFF Delay Time
tD(OFF)
25
60
ns
Fall-Time
tF
28
65
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
9.6
A
Drain-Source Diode Forward Voltage
VSD
IS=2.4A, VGS=0V
1.4
V
Reverse Recovery Time (Note 1)
tRR
IS=2.4A, VGS=0V,
dIF/dt=100A/µs
480
ns
Reverse Recovery Charge (Note 1)
QRR
2.0
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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