2N90G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

2N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-478.c

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

900

Breakdown Voltage Temperature Coefficient

△

VDSS/T

△ J Reference to 25°C, ID=250µA

1.0

V/°C

Drain-Source Leakage Current

IDSS

VDS=900V, VGS=0V

µA

VDS=720V, TC=125°C

100

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.1A

5.6

7.2

Ω

Forward Transconductance

gFS

VDS=50V, ID=1.1A (Note 1)

2.0

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

390 500

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

5.5

7.0

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=720V, ID=2.2A

(Note 1,2)

Gate to Source Charge

QGS

2.8

Gate to Drain Charge

QGD

6.1

Turn-ON Delay Time

tD(ON)

VDD=450V, ID=2.2A, RG=25Ω

(Note 1,2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

2.2

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

8.8

Drain-Source Diode Forward Voltage

VSD

IS=2.2A, VGS=0V

1.4

Reverse Recovery Time

trr

IS=2.2A,VGS=0V,dIF/dt=100A/µs

(Note 1)

400

Reverse Recovery Charge

QRR

1.6

µC

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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