2N7002

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R206-037,K

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Gate Source Voltage

Continuous

±20

V

±40

Drain Current

Continuous

300

mA

Pulsed

800

Power Dissipation

200

mW

Derated Above 25°C

1.6

mW/°C

Junction Temperature

+ 150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

625

°C/W

Junction to Case

215

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

100

nA

-100

nA

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage

1

2.1

2.5

V

Drain-Source On-Voltage

0.6

3.75

V

0.09

1.5

Static Drain-Source On-Resistance

7.5

Ω

7.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

Turn-On Time

20

nS

Turn-Off Time

20

nS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

0.88

1.5

V

Maximum Pulsed Drain-Source Diode

Forward Current

0.8

A

Maximum Continuous Drain-Source

Diode Forward Current

300

mA

Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%