2N7002L

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-284.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Continuous

±20

V

Gate-Source Voltage

±40

V

±115

Drain Current

Pulse(Note 2)

±800

mA

225

mW

Derate above 25°C

1.8

mW /°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≦300μs, Duty cycle≦2%

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

556

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage

1.0

2.5

V

3.75

Drain-Source On-State Voltage

0.375

V

On-State Drain Current

500

mA

7.5

Static Drain-Source On-Resistance

7.5

Ω

Forward Transconductance

80

mS

DYNAMIC PARAMETERS

Input Capacitance

50

pF

Output Capacitance

25

pF

Reverse Transfer Capacitance

5.0

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

20

ns

Turn-OFF Delay Time

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

1.5

V

Maximum Body-Diode Continuous Current

115

mA

Source Current Pulsed

800

mA

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.