2N7002ZG-AE2-R datasheet(2/4 Pages) UTC

2 / 4 page

2N7002Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-273.G

ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

300

Pulse(Note 2)

800

Power Dissipation

225

Derating above TA=25°C

1.6

mW/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≦10μs, Duty cycle≦1%

ELECTRICAL CHARACTERISTICS (T A=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=10µA

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

1.0

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=10V, ID=1mA

1.0

1.85

2.5

Static Drain-Source On-Resistance (Note)

RDS(ON)

VGS=10V, ID=0.3A

7.5

Ω

VGS=5V, ID=0.05A

7.5

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

3.0

5.0

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

ID=0.2 A, VDD=30V, VGS=10V,

RL=150Ω, RG=10Ω

Turn-OFF Delay Time

tD(OFF)

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, Is=300mA (Note)

0.88

1.5

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

0.8

Maximum Continuous Drain-Source Diode

Forward Current

300

Note: Pulse width≦300μs, Duty cycle≦1%

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