2N7002ZTL-AN3-R datasheet(2/3 Pages) UTC

2 / 3 page

2N7002ZT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-538.C

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

300

Pulse(Note 2)

800

Power Dissipation

200

Derating above TA=25°C

1.6

mW/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=10µA

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

1.0

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=10V, ID=1mA

1.0

1.85

2.5

Static Drain-Source On-Resistance (Note)

RDS(ON)

VGS=10V, ID=0.3A, TJ=125°C

13.5

Ω

VGS=5V, ID=0.05A

7.5

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

3.0

5.0

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

ID=0.2 A, VDD=30V, VGS=10V,

RL=150Ω, RG=10Ω

Turn-OFF Delay Time

tD(OFF)

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, Is=300mA (Note )

0.88

1.5

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

0.8

Maximum Continuous Drain-Source Diode

Forward Current

300

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse width≦300μs, Duty cycle≦1%

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