2SA1201

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R208-024,Ca

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-120

V

Collector-Emitter Voltage

-120

V

Emitter-Base Voltage

-5

V

Collector Current

-800

mA

Base Current

-160

mA

Collector Power Dissipation

500

mW

1000 (Note 2)

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Mounted on cermic substrate( 250mm

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector to Emitter Breakdown Voltage

-120

V

Emitter to Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-0.1

μA

Emitter Cut-Off Current

-0.1

μA

DC Current Gain

80

240

Collector to Emitter Saturation Voltage

-1.0

V

Base to Emitter Voltage

-1.0

V

Transition Frequency

120

MHz

Collector Output Capacitance

30

pF

RANK

O

Y

RANGE

80 - 160

120 - 240

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.