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2SC5353B 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SC5353B
功能描述  HIGH VOLTAGE NPN TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SC5353B 数据表(HTML) 2 Page - Unisonic Technologies

  2SC5353B Datasheet HTML 1Page - Unisonic Technologies 2SC5353B Datasheet HTML 2Page - Unisonic Technologies 2SC5353B Datasheet HTML 3Page - Unisonic Technologies 2SC5353B Datasheet HTML 4Page - Unisonic Technologies  
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2SC5353B
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-035.C
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900
V
Collector-Emitter Voltage
VCEO
750
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
3
A
Collector Current
Pulse
ICP
5
A
Base Current
IB
1
A
TO-220F/TO-126/TO-126C
20
W
TO-220
25
W
Power Dissipation
TO-251/TO-252
PD
22
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=1 mA, IE = 0
900
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10 mA, IB = 0
750
V
Collector Cut-off Current
ICBO
VCB=720V, IE= 0
100
µA
Emitter Cut-off Current
IEBO
VEB=7V, IC= 0
10
µA
hFE1
VCE=5 V, IC=1 mA
10
DC Current Gain
hFE2
VCE=5 V, IC=0.15 A
15
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1.2 A, IB=0.24 A
1.0
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=1.2 A, IB=0.24 A
1.3
V
Rise Time
tR
0.7
µS
Storage Time
tSTG
4.0
µS
Switching Time
Fall Time
tF
0.5
µS



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