2SD669/A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-005,J

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

180

V

Collector-Emitter Voltage

2SD669

120

V

2SD669A

160

Emitter-Base Voltage

5

V

Collector Current

1.5

A

Collector Peak Current

3

A

Power Dissipation

SOT-223/ SOT-89

0.5

W

TO-126

1.3

W

TO-126C

1

W

TO-92/TO-92NL

0.6

W

TO-251

1

W

TO-252

2

W

Junction Temperature

150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

HERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

SOT-89

38

°C/W

SOT-223

14

TO-92/ TO-92NL

80

TO-126

6.25

TO-126C

10

TO-251/ TO-252

4.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector to Base Breakdown Voltage

180

V

Collector to Emitter Breakdown

Voltage

2SD669

120

V

2SD669A

160

Emitter to Base Breakdown Voltage

5

V

Collector Cut-off Current

10

μA

DC Current Gain

60

320

30

Collector-Emitter Saturation Voltage

1

V

Base-Emitter Voltage

1.5

V

Current Gain Bandwidth Product

140

MHz

Output Capacitance

14

pF

Note: Pulse test.

RANK

B

C

D

RANGE

60-120

100-200

160-320