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2SD1624L-X-AB3-R 数据表(PDF) 4 Page - Unisonic Technologies |
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2SD1624L-X-AB3-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() 2SD1624 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R208-005.D TYPICAL CHARACTERISTICS Collector Current vs. Base to Emitter Voltage Base to Emitter Voltage, VBE (V) 0 0.2 0.4 0.6 1.0 1.2 VCE=2V 0.8 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.0 DC Current Gain vs. Collector Current Collector Current, IC (A) 0.01 0.1 7 1000 5 3 2 100 5 3 2 23 1.0 23 5 VCE=2V 25℃ -25℃ 57 23 5 7 7 7 Ta=75℃ |
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