2SD1898

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R208-030.C

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

100

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

5

V

Collector Current(DC)

1

A

Collector Current(PULSE) (Note 2)

2

A

Collector Power Dissipation (Note 3)

0.5

W

Collector Power Dissipation (Note 3)

2

W

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Duty=/1/2,Pw=200ms

3. When mounted on a 40*40*0.7 mm ceramic board.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

100

V

Collector Emitter Breakdown Voltage

80

V

Emitter Base Breakdown Voltage

5

V

Collector Cut-Off Current

1

μA

Emitter Cut-Off Current

1

μA

DC Current Transfer Ratio

82

390

Collector-Emitter Saturation Voltage

0.15

0.4

V

Transition Frequency

100

MHz

Output Capacitance

20

pF

RANK

P

Q

R

RANGE

82-180

120-270

180-390

UTC assum es no responsibility for equipm ent failures that result from using products at v alues that

exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.