3N70AL-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

3N70A

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-620.A

ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

700

Drain-Source Leakage Current

IDSS

VDS = 700 V, VGS = 0 V

μA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100 nA

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ

ID =250μA,Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 1.5A

2.8

4.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

350 450

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS = 25 V, VGS = 0 V, f =

1MHz

5.5

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

100

Turn-Off Fall Time

VDD = 30V, ID = 1.0 A,

RG = 25Ω (Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

2.7

Gate-Drain Charge

QDD

VDS= 480V,ID= 3.0A,

VGS= 10V (Note 1, 2)

4.9

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

3.0

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

210

Reverse Recovery Charge

QRR

VGS = 0 V, IS = 3.0 A,

dIF/dt = 100 A/μs (Note 1)

1.2

µC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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