4N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-550.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

4

A

Drain Current

Pulsed (Note 1)

8

A

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220

60

W

Power Dissipation

TO-220F

27

W

TO-220

0.48

W/°C

Derate above 25°C

TO-220F

0.22

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

TO-220

2.08

Junction to Case

TO-220F

4.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

400

V

Drain-Source Leakage Current

1

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

1.2

1.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

750

pF

Output Capacitance

150

pF

Reverse Transfer Capacitance

100

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

12

45

ns

Rise Time

42

60

ns

Turn-OFF Delay Time

130 200

ns

Fall-Time

(Note 2, 3)

62

100

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Body Diode Reverse Recovery Time

800

ns

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

3. Essentially independent of operating temperature