4N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-061,Q

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

4.4

A

Drain Current

Continuous

4.0

A

Pulsed (Note 2)

16

A

Avalanche Energy

Single Pulsed

(Note 3)

4N60

260

mJ

4N60-E

200

mJ

Repetitive (Note 2)

10.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/TO-262/TO-263

106

W

TO-220F/TO-220F1

36

TO-220F2

38

TO-251/ TO-252

50

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-262/TO-263

62.5

°С/W

TO-220F/TO-220F1

62.5

TO-220F2

62.5

TO-251/ TO-252

83

Junction to Case

TO-220/TO-262/TO-263

1.18

°С/W

TO-220F/TO-220F1

3.47

TO-220F2

3.28

TO-251/ TO-252

2.5