5N60G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

5N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-065,H

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID = 250μA

600

Drain-Source Leakage Current

IDSS

VDS =600V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS =30V, VDS = 0V

100

Reverse

VGS =-30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ

ID =250μA, Referenced to 25℃

0.6

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS =10V, ID = 2.5A

1.8

2.2

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1.0MHz

515 670

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

6.5

8.5

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 300V, ID =5A,

RG = 25Ω (Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

100

Total Gate Charge

VDS = 480 V, ID = 5A,

VGS = 10 V (Note 1, 2)

Gate-Source Charge

QGS

2.5

Gate-Drain Charge

QGD

6.6

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 5A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, IS = 5A,

dIF / dt = 100 A/μs (Note 1)

300

Reverse Recovery Charge

QRR

2.2

μC

Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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