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7N10L-TN3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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7N10L-TN3-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-394.F 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters,. FEATURES * Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.35Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL 2.Drain 3.Source 1.Gate ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 7N10L-AA3-R 7N10G-AA3-R SOT-223 G D S Tape Reel 7N10L-TN3-R 7N10G-TN3-R TO-252 G D S Tape Reel 7N10L-TN3-T 7N10G-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
类似零件编号 - 7N10L-TN3-R |
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类似说明 - 7N10L-TN3-R |
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