7N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-394.F

PARAMETER

SYMBOL

RATINGS

UNIT

Drain -Source Voltage

100

V

Gate-Source Voltage

±25

V

Continuous Drain Current

7

A

6.8

A

Pulsed Drain Current (Note 2)

16

A

Avalanche Current (Note 2)

7

A

Repetitive Avalanche Energy (Note 2)

0.2

mJ

Single Pulsed Avalanche Energy (Note 3)

50

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

Power Dissipation

SOT-223

2.0

W

TO-252

2.5

Derate above 25°C

SOT-223

0.016

W/°C

TO-252

0.02

Operating Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

62.5

°C/W

TO-252

50

Note: When mounted on the minimum pad size recommended (PCB Mount)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

0.1

V/°C

Drain-Source Leakage Current

1

µA

10

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

0.28 0.35

Ω

Forward Transconductance

1.85

S

DYNAMIC PARAMETERS

Input Capacitance

190

250

pF

Output Capacitance

60

75

pF

Reverse Transfer Capacitance

10

13

pF