DTD113ZLG-AE3-R datasheet(2/3 Pages) UTC

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DTD113Z

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-082.F

ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-5 ~ +10

Output Current

IOUT

500

Power Dissipation

SOT-23/SOT-323

200

SOT-523

150

TO-92

625

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

VIN(OFF)

VCC =5V, IOUT =100μA

0.3

VIN(ON)

VOUT =0.3V, IOUT =20mA

1.5

Output Voltage

VOUT(ON)

IOUT/IIN =50mA/2.5mA

0.1

0.3

Input Current

IIN

VIN=5V

7.2

Output Current

IOUT(OFF)

VCC =50V, VIN =0V

0.5

μA

DC Current Gain

hFE

VOUT =5V, IOUT =50mA

Input Resistance

0.7

1.3

KΩ

Resistor Ratio

R2/R1

Transition Frequency

VCE =10V, IE =−50mA, f=100MHz (Note)

200

MHz

Note: Transition frequency of the device

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