HE8551L-X-T92-R datasheet(2/4 Pages) UTC

2 / 4 page

HE8551

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-047.D

ABSOLUTE MAXIMUM RATINGS (T

A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

Collector-Emitter Voltage

VCEO

-25

Emitter-Base Voltage

VEBO

-6

Collector Dissipation (TA=25

)

℃

Collector Current

-1.5

Junction Temperature

+150

℃

Storage Temperature

TSTG

-65 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

J=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

-40

Collector-Emitter Breakdown Voltage

BVCEO

IC=-2mA, IB=0

-25

Emitter-Base Breakdown Voltage

BVEBO

IE=-100μA, IC=0

-6

Collector Cut-Off Current

ICBO

VCB=-35V, IE=0

-100

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-100

DC Current Gain

hFE1

VCE=-1V, IC=-5mA

170

hFE2

VCE=-1V, IC=-100mA

160

500

hFE3

VCE=-1V, IC=-800mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-800mA, IB=-80mA

-0.28

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-800mA, IB=-80mA

-0.98

-1.2

Base-Emitter Voltage

VBE

VCE=-1V, IC=-10mA

-0.66

-1.0

Current Gain Bandwidth Product

VCE=-10V, IC=-50mA

100

190

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

9.0

CLASSIFICATION OF hFE2

RANK

RANGE

120-200

160-300

250-500

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