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IMZ88G-AG6-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 IMZ88G-AG6-R
功能描述  GENERAL PURPOSE DUAL TRANSISTOR)
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

IMZ88G-AG6-R 数据表(HTML) 2 Page - Unisonic Technologies

  IMZ88G-AG6-R Datasheet HTML 1Page - Unisonic Technologies IMZ88G-AG6-R Datasheet HTML 2Page - Unisonic Technologies IMZ88G-AG6-R Datasheet HTML 3Page - Unisonic Technologies  
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IMZ88
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R215-005.Ca
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATING
UNIT
TR1
TR2
Collector-Base Voltage
VCBO
-30
30
V
Collector-Emitter Voltage
VCEO
-20
20
V
Emitter-Base Voltage
VEBO
-5
5
V
Collector Current
IC
-700
700
mA
Power Dissipation (Note 1)
PD
300
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: 1. 200mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
TR1
Collector-Base Breakdown Voltage
BVCBO
IC=-100μA,IE=0
-30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC= -1mA, IB=0
-20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA,IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-30V,IE=0
-1
µA
Emitter Cut-Off Current
IEBO
VEB= -5V, IC=0
-100
µA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-500mA, IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(SAT)
IC= 500mA, IB=-50mA
-1.2
V
Base-emitter saturation voltage
VBE
VCE=-1V, IC=-10mA
-1.0
V
DC Current Transfer Ratio
hFE1
VCE= -1V, IC = -1mA
100
hFE2
VCE=-1V, IC=-150mA
120
110
400
hFE3
VCE=-1V, IC=-500mA
40
Transition Frequency
fT
VCE=-10V,IC=-50mA
100
MHz
Output Capacitance
COB
VCB=10V,IE=0, f=1MHz
9.0
pF
TR2
Collector-Base Breakdown Voltage
BVCBO
IC=100μA,IE=0
30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA,IB=0
20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA,IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=30V
1
µA
Emitter Cut-Off Current
IEBO
VEB=5V
100
µA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
Base-emitter saturation voltage
VBE(SAT)
IC=500mA, IB=50mA
1.2
V
Base-emitter saturation voltage
VBE
VCE=1V, IC=10mA
1.0
V
DC Current Transfer Ratio
hFE1
VCE=1V, IC = 1mA
100
hFE2
VCE=1V, IC=150mA
120
110
400
hFE3
VCE=1V, IC=500mA
40
Transition Frequency
fT
VCE=10V, IC=50mA
100
MHz
Output Capacitance
COB
VCB=10V, IE=0, f=1MHz
9.0
pF



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