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KPY51-R 数据表(PDF) 2 Page - Siemens Semiconductor Group |
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KPY51-R 数据表(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 4 page ![]() KPY 51-R KPY 56-R Semiconductor Group 2 1) Frontside coupling applies pressure onto chip face. Rearside coupling applies pressure through Kovar centre tube. Absolute Maximum Ratings Parameter Symbol Limit Values 1) Unit Frontside Rearside Pressure overload KPY 51 R KPY 52 R KPY 53 R KPY 54 R KPY 55 R KPY 56 R P MAX 2 6 10 16 30 75 2 6 10 16 30 40 bar Operating temperature range T A − 40 …+ 125 ˚C Storage temperature range T stg − 50 …+ 130 ˚C Supply voltage V IN 12 V Electrical Characteristics at T A = 25 ˚C and VIN = 5 V, unless otherwise specified. Parameter Symbol Limit Values Unit min. typ. max. Bridge resistance R B 4 − 8k Ω Sensitivity KPY 51 R KPY 52 R KPY 53 R KPY 54 R KPY 55 R KPY 56 R s 16.8 11.0 5.6 4.0 1.8 0.88 24.0 15.0 8.8 6.0 2.6 1.2 32.0 24.0 12.5 9.0 4.0 2.0 mV/ Vbar Output voltage KPY 51 R KPY 52 R KPY 53 R KPY 54 R KPY 55 R KPY 56 R V fin 21 33 45 80 90 110 30 45 70 120 130 150 40 72 100 180 200 250 mV Offset voltage P = P 0 V 0 − 25 −+ 25 mV |
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