10N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-119.J

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

V

Avalanche Current (Note 2)

10

A

Drain Current

Continuous

10

A

Pulsed (Note 2)

38

A

Avalanche Energy

Single Pulsed (Note 3)

700

mJ

Repetitive (Note 2)

15.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/ TO-263

156

W

TO-220F/TO-220F1

50

TO-220F2

52

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220

0.8

°C/W

TO-220F/TO-220F1

2.5

TO-220F2

2.4

TO-263

0.7

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

100

nA

Reverse

-100 nA

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.72 0.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

f=1.0 MHz

1570 2040 pF

Output Capacitance

166 215

pF

Reverse Transfer Capacitance

18

24

pF

Gate Resistance

0.25

1.4

Ω