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MJD210G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MJD210G-TN3-R
功能描述  PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MJD210G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MJD210G-TN3-R Datasheet HTML 1Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 2Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 3Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 4Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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MJD210
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R213-001.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-7
V
Continuous
-5
A
Collector Current
Peak
IC
-10
A
Base Current
IB
-1
A
TC=25°C
12.5
W
Derate above 25
°C0.1
W/
°C
Ta=25
°C (Note2)
1.4
W
Total Device Dissipation
Derate above 25
°C
PD
0.011
W/
°C
Junction Temperature
TJ
+150
°C
Storage Junction Temperature
TSTG
-65 ~ +150
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
THERMAL DATA (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
89.3
°C/W
Junction to Case
θJC
10
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0
-25
V
VCB=-40V, IE=0
-100
nA
Collector Cutoff Current
ICBO
VCB=-40V, IE=0, TJ=125°C
-100
nA
Emitter Cutoff Current
IEBO
VBE=-7V, IC=0
-100
nA
ON CHARACTERISTICS
IC=-500mA, VCE=-1V
70
IC=-2A, VCE=-1V
45
180
DC Current Gain (Note 1)
hFE
IC=-5A, VCE=-2V
10
IC=-500mA, IB=-50mA
-0.3
IC=-2A, IB=-200mA
-0.75
Collector-Emitter Saturation Voltage (Note 1)
VCE(SAT)
IC=-5A, IB=-1A
-1.8
V
Base-Emitter Saturation Voltage (Note 1)
VBE(SAT)
IC=-5A, IB=-1A
-2.5
V
Base-Emitter On Voltage (Note 1)
VBE(ON)
IC=-2A, VCE=-1V
-1.6
V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 2)
fT
IC=-100mA, VCE=-10V,
fTEST = 10MHz
65
MHz
Output Capacitance
COB
VCB=-10V, IE=0, f=0.1MHz
120
pF
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%.
2. fT =｜hFE｜‧fTEST.



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