MJE13003DG-T92-R datasheet(2/4 Pages) UTC

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MJE13003D

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-025.d

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Emitter Voltage (VBE =0)

VCES

700

Collector-Emitter Voltage (IB =0)

VCEO

400

Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)

VEBO

Collector Current

1.5

Collector Peak Current (tP<5ms)

ICM

Base Current

0.75

Base Peak Current (tP<5ms)

IBM

1.5

Power Dissipation (TC=25°C)

TO-126

TO-92

TO-220

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Emitter-Base Breakdown Voltage

BVEBO

IE =10mA, IC=0

Collector-Emitter Sustaining Voltage (Note)

VCEO(SUS)

IC=10mA, IB=0

400

Collector Cut-Off Current

ICES

VCE =700V,VBE =0

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)

IC=0.5 A, IB=0.1 A

0.5

IC=1 A, IB=0.25 A

IC=1.5 A, IB=0.5 A

Base-Emitter Saturation Voltage (Note)

VBE(SAT)

IC=0.5 A, IB=0.1 A

IC=1 A, IB=0.25 A

1.2

DC Current Gain

hFE

IC=0.5A, VCE =5 V

IC=1 A, VCE =5 V

Resistive Load

Rise Time

VCC=125 V, IC=1 A,

IB1=0.2 A, IB2=-0.2 A

tP=25μs

μs

Storage Time

μs

Fall Time

0.7

μs

Inductive Load Storage Time

IC=1 A, IB1=0.2 A,VBE =-5 V,

L=50mH, VCLAMP=300V

0.8

μs

Diode Forward Voltage

IF=0.5 A

1.5

Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %

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