MMBF170G-AE2-R datasheet(1/2 Pages) UTC

部件名	MMBF170G-AE2-R

功能描述	0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 2 page

UNISONIC TECHNOLOGIES CO., LTD

MMBF170

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 2

QW-R502-629.a

0.5A, 60V N-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

The UTC MMBF170 is an N-channel enhancement MOSFET

using UTC’s advanced technology to provide the customers with

perfect RDS(ON), low input capacitance, low gate threshold voltage

and high switching speed.

FEATURES

* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A

* High Switching Speed

* Low Input Capacitance(typical 22pF)

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

MMBF170L-AE2-R

MMBF170G-AE2-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

类似零件编号 - MMBF170G-AE2-R

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	MMBF170	75Kb / 5P	N-Channel Enhancement Mode Field Effect Transistor
Diodes Incorporated	MMBF170	62Kb / 2P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30104 Rev. C-2
Fairchild Semiconductor	MMBF170	517Kb / 13P	N-Channel Enhancement Mode Field Effect Transistor
SHIKUES Electronics	MMBF170	873Kb / 6P	N-Channel Enhancement Mode MOSFET
ON Semiconductor	MMBF170	1Mb / 16P	N-Channel Enhancement Mode Field Effect Transistor March 2010 Rev. E2

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