MMBT1815L-X-AE3-R datasheet(3/5 Pages) UTC

3 / 5 page

MMBT1815

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R206-014,K

ABSOLUTE MAXIMUM RATING ( TA=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Dissipation

(TA=25°C)

SOT-23

250

SOT-523/SOT-113/SOT-323

200

SOT-723

190

Collector Current

150

Base Current

Junction Temperature

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

IE = 10μA, IC = 0

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 100mA, IB = 10mA

0.1

0.25

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 100mA, IB = 10mA

1.0

Collector Cut-off Current

ICBO

VCB = 60V, IE = 0

100

Emitter Cut-off Current

IEBO

VEB = 5V, IC = 0

100

DC Current Gain

hFE1

VCE = 6V, IC = 2mA

120

700

hFE2

VCE = 6V, IC = 150mA

Transition Frequency

VCE = 10V,Ic = 50mA

MHz

Output Capacitance

COB

VCB = 10V, IE = 0, f = 1MHz

2.0

3.0

Noise Figure

IC = 0.1mA, VCE = 6V

RG = 10kΩ, f = 100Hz

1.0

CLASSIFICATION OF hFE1

RANK

RANGE

120-240

200-400

350-700

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