MMBT2222AL-AE3-R datasheet(3/6 Pages) UTC

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MMBT2222A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R206-019,I

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

IC=10μA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, IC =0

VCB=60V, IE=0

0.01

µA

Collector Cutoff Current

ICBO

VCB=60V, IE=0, Ta=150°C

µA

Emitter Cutoff Current

IEBO

VEB=3.0V, IC=0

Base Cutoff Current

IBL

VCE=60V, VEB(OFF)=3.0V

Collector Cutoff Current

ICEO

VCE=60V, VEB(OFF)=3.0V

ON CHARACTERISTICS

IC =0.1mA, VCE=10V

IC =1.0mA, VCE=10V

IC =10mA, VCE=10V

IC =10mA, VCE=10V, Ta= -55°C

IC =150mA, VCE=10V(Note)

100

300

IC =150mA, VCE=1.0V(Note)

DC Current Gain

hFE

IC =500mA, VCE=10V(Note)

IC =150mA, IB=15mA

0.3

Collector-Emitter Saturation

Voltage(Note)

VCE(SAT)

IC =500mA, IB=50mA

1.0

IC =150mA, IB=15mA

0.6

1.2

Base-Emitter Saturation

Voltage(Note)

VBE(SAT)

IC =500mA, IB=50mA

2.0

SMALL SIGNAL CHARACTERISTICS

Real Part of Common-Emitter High

Frequency Input Impedance

Re(hje)

IC=20mA, VCB=20V, f=300MHz

Ω

Transition Frequency

IC =20mA, VCE=20V, f=100MHz

300

MHz

Output Capacitance

Cobo

VCB=10V, IE=0, f=100kHz

8.0

Input Capacitance

Cibo

VEB=0.5V, IC=0, f=100kHz

Collector Base Time Constant

rb'Cc

IC=20mA, VCB=20V, f=31.8MHz

150

Noise Figure

IC=100μA, VCE=10V, Rs=1.0kΩ

f=1.0kHz

4.0

SWITCHING CHARACTERISTICS

Delay Time

VCC=30V, VBE(OFF)=0.5V,

Rise Time

IC=150mA, IB1=15mA

Storage Time

Vcc=30V, IC=150mA

225

Fall Time

IB1= IB2=15mA

Note: Pulse test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2.0%

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