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MMBT2907AL-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBT2907AL-AE3-R
功能描述  PNP GENERAL PURPOSE AMPLIFIER
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBT2907AL-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBT2907AL-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT2907AL-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT2907AL-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBT2907AL-AE3-R Datasheet HTML 4Page - Unisonic Technologies MMBT2907AL-AE3-R Datasheet HTML 5Page - Unisonic Technologies MMBT2907AL-AE3-R Datasheet HTML 6Page - Unisonic Technologies  
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MMBT2907A
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R220-001.D
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
-60
V
Collector-Base Voltage
VCBO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Continuous
IC
-800
mA
SOT-23
350
mW
Power Dissipation
SOT-323
PD
275
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
357
°C/W
Junction to Case
SOT-323
θJA
455
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note)
BVCEO IC=-10mA, IB=0
-
60
V
Collector-Base Breakdown Voltage
BVCBO IC=-10μA, IE=0
-60
V
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA , IC=0
-
5
V
Base Cutoff Current
IB
VCB=-30V, VEB=-0.5V
-
50
nA
Collector Cutoff Current
ICEX
VCE=-30V, VBE=-0.5V
-
50
nA
VCB=-50V, IE=0
-
0.02
μA
Collector Cutoff Current
ICBO
VCB=-50V, IE=0, TA=150°С
-
20
μA
ON CHARACTERISTICS
IC=-0.1mA, VCE=-10V
75
IC=-1.0 mA, VCE=-10V
100
IC=-10 mA, VCE=-10V
100
IC=-150 mA, VCE=-10V (Note)
100
300
DC Current Gain
hFE
IC=-500 mA, VCE=-10V (Note)
50
IC=-150 mA, IB=-15mA
-
0.4
V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=-500 mA, IB=-50mA
-
1.6
V
IC=-150 mA, IB=-15mA (Note)
-
1.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500 mA, IB=-50mA
-
2.6
V
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
fT
IC=-50mA, VCE=-20V, f=100MHz
200
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=100kHz
8
pF
Input Capacitance
Cib
VEB=-2V, IC=0, f=100kHz
30
pF
SWITCHING CHARACTERISTICS
Turn-on Time
tON
45
ns
Delay Time
tDLY
10
ns
Rise Time
tR
VCC=30V, IC=-150mA,
IB1=-15mA
40
ns
Turn-off Time
tOFF
100
ns
Storage Time
tS
80
ns
Fall Time
tF
VCC=6V, IC=-150mA,
IB1= IB2=-15mA
30
ns
Note: Pulse Test: Pulse Width
≤ 300ms, Duty Cycle≤2.0%



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