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MMBT5088G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBT5088G-AE3-R
功能描述  NPN GENERAL PURPOSE AMPLIFIER
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBT5088G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBT5088G-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT5088G-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT5088G-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBT5088G-AE3-R Datasheet HTML 4Page - Unisonic Technologies MMBT5088G-AE3-R Datasheet HTML 5Page - Unisonic Technologies MMBT5088G-AE3-R Datasheet HTML 6Page - Unisonic Technologies  
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MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,Ltd
2 of 6
www.unisonic.com.tw
QW-R206-033,B
ABSOLUTE MAXIMUM RATING (T
A=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
MMBT5088
30
Collector-Emitter voltage
MMBT5089
VCEO
25
V
MMBT5088
35
Collector-Base voltage
MMBT5089
VCBO
30
V
Emitter-base voltage
VEBO
4.5
V
Collector current-continuous
IC
100
mA
Total Device Dissipation
350
mW
Linear Derating Factor above TA= 25℃
PD
2.8
mW/℃
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-40 ~ +150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are based on a maximum junction temperature of 150 degrees C.
Note:
3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (T
A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θ
JA
357
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
MMBT5088
30
V
Collector-Emitter Breakdown Voltage
(Note)
MMBT5089
BVCEO
IC=1.0mA, IB=0
25
V
MMBT5088
35
V
Collector-Base Breakdown Voltage
MMBT5089
BVCBO
IC=100μA, IE=0
30
V
MMBT5088
VCB=20V, IE=0
50
nA
Collector Cut-Off Current
MMBT5089
ICBO
VCB=15V, IE=0
50
nA
VEB=3.0V, IC=0
50
nA
Emitter Cutoff Current
IEBO
VEB=4.5V, IC=0
100
nA
ON CHARACTERISTICS
MMBT5088
300
900
MMBT5089
VCE=5.0V, IC=100μA
400
1200
MMBT5088
350
MMBT5089
VCE=5.0V, IC=1.0mA
450
MMBT5088
300
DC Current Gain
MMBT5089
hFE
VCE=5.0V,
IC=10mA(Note)
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1.0mA
0.5
V
Base-Emitter On Voltage
VBE(ON)
IC=10mA, VCE=5.0V
0.8
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
VCE=5.0mA,
IC=500μA, f=20MHz
50
MHz
Collector-Base Capacitance
CCB
VCB=5.0V, IE=0,
f=100kHz
4
pF
Emitter-Base Capacitance
CEB
VEB=0.5V, IC=0,
f=100kHz
10
pF
MMBT5088
350
1400
Small-Signal Current Gain
MMBT5089
hFE
VCE=5.0V, IC=1.0mA,
f=1.0kHz
450
1800
MMBT5088
3.0
dB
Noise Figure
MMBT5089
NF
VCE=5.0V, IC=100μA,
RS=10kΩ,
f=10kHz ~ 15.7kHz
2.0
dB
Note: Pulse Test: Pulse Width
≤300μs, Duty Cycle≤2.0%.



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