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MMBT4403G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBT4403G-AE3-R
功能描述  PNP GENERAL PURPOSE AMPLIFIER
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBT4403G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBT4403G-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT4403G-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT4403G-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBT4403G-AE3-R Datasheet HTML 4Page - Unisonic Technologies MMBT4403G-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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MMBT4403
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R206-034.F
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current-Continuous
IC
-600
mA
350
mW
Total Device Dissipation
Derate above 25°C
PC
2.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
357
°C /W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
BVCEO IC=-1mA, IB=0
-40
V
Collector-Base Breakdown Voltage
BVCBO IC=-0.1mA, IE=0
-40
V
Emitter-Base Breakdown Voltage
BVEBO IE=-0.1mA, IC=0
-5
V
Collector Cut-off Current
ICEX
VCE=-35V, VEB=-0.4V
-0.1
µA
Base Cut-off Current
IBEX
VCE=-35V, VBE=-0.4V
-0.1
µA
ON CHARACTERISTICS*
hFE1
VCE=-1V,IC=-0.1mA
30
hFE2
VCE=-1V,IC=-1mA
60
hFE3
VCE=-1V,IC=-10mA
100
hFE4
VCE=-2V, IC=-150mA (Note)
100
300
DC Current Gain
hFE5
VCE=-2V, IC=-500mA (Note)
20
VCE(SAT1) IC=-150mA, IB=-15mA
-0.4
Collector-Emitter Saturation
Voltage
VCE(SAT2)IC=-500mA, IB=-50mA
-0.75
V
VBE(SAT1) IC=-150mA, IB=-15mA(Note)
-0.75
-0.95
Base-Emitter Saturation Voltage
VBE(SAT2)IC=-500mA, IB=-50mA
-1.3
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
VCE=-10V, IC=-20mA, f=100MHz
200
MHz
Collector-Base Capacitance
CCB
VCB=-10V, IE=0, f=140kHz
8.5
pF
Emitter-Base Capacitance
CEB
VBE=-0.5V, IC=0, f=140kHz
30
pF
Input Impedance
hIE
VCE=-10V, IC=-1mA, f=1kHz
1.5
15
kΩ
Voltage Feedback Ratio
hRE
VCE=-10V, IC=-1mA, f=1kHz
0.1
8
×10
-4
Small-Signal Current Gain
hFE
VCE=-10V, IC=-1mA, f=1kHz
60
500
Output Admittance
hOE
VCE=-10V, IC=-1mA, f=1kHz
1.0
100
µmbos
SWITCHING CHARACTERISTICS
Delay Time
tD
15
Rise Time
tR
VCC=-30V, IC=-150mA IB1=-15mA
20
ns
Storage Time
tS
225
Fall Time
tF
VCC=-30V, IC=-150mA
IB1= IB2=-15mA
30
ns
Note: Pulse test: Pulse Width≤300
μs, Duty Cycle≤2%



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