MMBTA05L-AL3-R datasheet(2/3 Pages) UTC

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MMBTA05

Preliminary

AMPLIFIER TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-099.a

ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current - Continuous

500

Power Dissipation, @TA=25℃

150

Junction Temperature

125

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

junction to ambient (Note)

θJA

833

℃

junction to case

θJC

347

℃

Note: θJA is measured with the device soldered into a typical printed circuit board.

ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector-emitter breakdown voltage

V(BR)CEO IC=1.0mA, IB=0(Note 1)

Emitter-base breakdown voltage

V(BR)EBO IE=100μA, Ic=0

Collector cutoff current

ICEO

VCE=60V, IB=0

0.1

μA

Collector cutoff current

ICBO

VCB=60V, IE=0

0.1

μA

ON CHARACTERISTICS

DC current gain

hFE

IC=10mA, VCE=1V

IC=100mA, VCE=1V

100

Collector-emitter saturation voltage

VCE(SAT) IC=100mA, IB=10mA

0.25

Base-emitter on voltage

VBE(ON)

IC=100mA, VCE=1V

1.2

SMALL-SIGNAL CHARACTERISTICS

Current gain bandwidth product

IC=10mA, VCE=2V, f=100MHz(Note 2)

100

MHz

Note 1. Pulse test: PW<=300

μs, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

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