MMBTA06

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R206-041,D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

80

V

Collector Emitter Voltage

80

V

Emitter Base Voltage

4

V

Collector Current - Continuous

500

mA

350

mW

Total Device Dissipation(Note 2)

Derate Above 25°C

2.8

mW/°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on FR-4=1.6×1.6×0.06 in

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

357

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage (Note 1)

80

V

Emitter Base Breakdown Voltage

4

V

Collector Cutoff Current

0.1

μA

Collector Cutoff Current

0.1

μA

ON CHARACTERISTICS

100

DC Current Gain

100

Collector Emitter Saturation Voltage

0.25

V

Base Emitter on Voltage

1.2

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (Note2)

MHz

Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%