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MMBTA42-AE3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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MMBTA42-AE3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() MMBTA42 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1K 500 1 2 5 10 20 50 100 200 500 200 100 50 20 10 5 2 1 DC Current Gain vs. Output Current Ta=25°C Ta=150°C Ta=-50°C VCE=5V Collector Current, IC (mA) 1K 500 12 5 10 20 50 100 200 500 200 100 50 20 10 5 2 1 DC Current Gain vs. Output Current Collector Current, IC (mA) Ta=25℃ Ta=150℃ Ta=-50℃ VCE=10V 12 5 10 20 50 100 200 500 Collector Emitter Saturation vs. Collector Current Collector Current, IC (mA) IC/IB=10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 110 100 Collector Current, IC (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 Ta=150°C Ta=25°C VCE=5V Ta=-50°C Collector Emitter Saturation vs. Collector Current Ta=150°C Ta=-50°C Ta=25°C Current Gain Bandwidth Product Collector Current, IC (mA) 24 8 20 Ta=25°C 6 10 10.0 100.0 1000.0 VCE=5V 12 14 16 18 400 350 100 50 0 25 50 75 100 125 150 300 250 200 150 0 175 Power Derating Power Dissipation vs. Case Temperature Case Temperature, TC (°C) UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-004,E |
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