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MMBTA45-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBTA45-AE3-R
功能描述  HIGH VOLTAGE TRANSISTORS
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBTA45-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

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MMBTA44/45
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-007.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
MMBTA44
500
V
Collector-Base Voltage
MMBTA45
VCBO
400
V
MMBTA44
400
V
Collector-Emitter Voltage
MMBTA45
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Ta=25°C
350
mW
Power Dissipation
TC=25°C
PD
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MMBTA44
500
V
Collector-Base Breakdown
Voltage
MMBTA45
BVCBO
IC=100μA, IB=0
400
V
MMBTA44
400
V
Collector-Emitter Breakdown
Voltage
MMBTA45
BVCEO
IC =1mA, IB=0
350
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC =0
6
V
IC =1mA, IB=0.1mA
0.4
V
IC =10mA, IB=1mA
0.5
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =50mA, IB=5mA
0.75
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC 10mA, IB=1mA
0.75
V
MMBTA44
VCB=400V, IE =0
0.1
μA
Collector Cut-off Current
MMBTA45
ICBO
VCB=320V, IE =0
0.1
μA
MMBTA44
VCE =400V, IB=0
0.5
μA
Collector Cut-off Current
MMBTA45
ICES
VCE =320V, IB=0
0.5
μA
Emitter Cut-off Current
IEBO
VEB=4V, IC =0
0.1
μA
hFE1
VCE =10V, IC =1mA
40
hFE2
VCE =10V, IC =10mA
50
240
hFE3
VCE =10V, IC =50mA
45
DC Current Gain (Note)
hFE4
VCE =10V, IC =100mA
40
Current Gain Bandwidth Product
fT
VCE =20V, IC =10mA
f=100MHz
50
MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%



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