MMBTA92-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA92

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-005,D

ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-300

Collector-Emitter Voltage

VCEO

-300

Emitter-Base Voltage

VEBO

-5

Collector Current

-500

Ta=25°C

350

TC=25°C

1.5

Collector Dissipation

Derate Above Ta >25°C

mW/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO IC=-100μA, IE=0

-300

Collector-Emitter Breakdown Voltage

BVCEO IC=-1mA, IB=0

-300

Emitter-Base Breakdown Voltage

BVEBO IE=-100μA, IC=0

-5

Collector Cut-Off Current

ICBO

VCB=-200V, IE=0

-0.25

μA

Emitter Cut-Off Current

IEBO

VEB=-3V, IC=0

-0.10

μA

VCE=-10V, IC=-1mA

VCE=-10V, IC=-10mA

DC Current Gain (Note)

hFE

VCE=-10V, IC=-30mA

Collector-Emitter Saturation Voltage

VCE(SAT)1 IC=-20mA, IB=-2mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)1 IC=-20mA, IB=-2mA

-0.90

Current Gain Bandwidth Product

VCE=-20V, IC=-10mA, f=100MHz

MHz

Collector Base Capacitance

Ccb

VCB=-20V, IE=0, f=1MHz

Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)1<200mV (Class SIN)

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