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10N65L-TQ2-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 10N65L-TQ2-R
功能描述  10A, 650V N-CHANNEL POWER MOSFET
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

10N65L-TQ2-R 数据表(HTML) 3 Page - Unisonic Technologies

  10N65L-TQ2-R Datasheet HTML 1Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 2Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 3Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 4Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 5Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 6Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 7Page - Unisonic Technologies 10N65L-TQ2-R Datasheet HTML 8Page - Unisonic Technologies  
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10N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-588.C
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650V, VGS = 0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30 V, VDS = 0 V
100
nA
Reverse
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 4.75A
0.72 0.86
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
1570 2040 pF
Output Capacitance
COSS
166
215
pF
Reverse Transfer Capacitance
CRSS
18
24
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=325V, ID =10A, RG =25Ω
(Note 1, 2)
23
55
ns
Turn-On Rise Time
tR
69
150
ns
Turn-Off Delay Time
tD(OFF)
144
300
ns
Turn-Off Fall Time
tF
77
165
ns
Total Gate Charge
QG
VDS=520V, ID=10A, VGS=10 V
(Note 1, 2)
44
57
nC
Gate-Source Charge
QGS
6.7
nC
Gate-Drain Charge
QGD
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
10
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
420
ns
Reverse Recovery Charge
QRR
4.2
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature



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