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MMBTH10G-X-AN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBTH10G-X-AN3-R
功能描述  RF TRANSISTOR
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBTH10G-X-AN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBTH10G-X-AN3-R Datasheet HTML 1Page - Unisonic Technologies MMBTH10G-X-AN3-R Datasheet HTML 2Page - Unisonic Technologies MMBTH10G-X-AN3-R Datasheet HTML 3Page - Unisonic Technologies MMBTH10G-X-AN3-R Datasheet HTML 4Page - Unisonic Technologies MMBTH10G-X-AN3-R Datasheet HTML 5Page - Unisonic Technologies  
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MMBTH10
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R206-003.F
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
SOT-23
225
mW
Power Dissipation
SOT-323/SOT-523
PC
200
mW
Collector current
IC
50
mA
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100µA
30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
25
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA
3
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=4mA, IB=400µA
500
mV
Base-Emitter on Voltage
VBE(ON)
VCE=10V, IC=4mA
950
mV
Collector Cut-off Current
ICBO
VCB=25V
100
nA
Emitter Cut-off Current
IEBO
VEB=2V
100
nA
DC Current Gain
hFE
VCE=10V, IC=4mA
60
Output Capacitance
Cob
VCB=10V, f=1MHZ
0.7
pF
Current Gain Bandwidth Product
fT
VCE=10V, IC=4mA, f=100MHz
650
MHz
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-100
90-130
120-200



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