10NN15

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-565.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

150

V

Gate-Source Voltage

±20

V

Continuous (Note 3)

3

A

Drain Current

Pulsed (Note 2)

12

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by Max. junction temperature.

3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

62.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

150

V

Drain-Source Leakage Current

10

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

400 mΩ

DYNAMIC PARAMETERS

Input Capacitance

420 672

pF

Output Capacitance

60

pF

Reverse Transfer Capacitance

40

pF

SWITCHING PARAMETERS

Total Gate Charge

10

16

nC

Gate to Source Charge

2

nC

Gate to Drain Charge

(Note 1, 2)

4

nC

Turn-ON Delay Time

6.5

ns

Rise Time

7

ns

Turn-OFF Delay Time

14

ns

Fall-Time

35

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.3

V

Body Diode Reverse Recovery Time

40

ns

Body Diode Reverse Recovery Charge

75

µC

Note:

1. Pulse width ≤ 300µs, duty cycle ≤ 2% .

2. Essentially independent of operating temperature.