12N10L-TN3-R datasheet(3/5 Pages) UTC

部件名	12N10L-TN3-R

功能描述	12A, 100V N-CHANNEL POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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3 / 5 page

12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-737.a

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

(Note 1,2)

Total Gate Charge

VGS=10V, VDD=80V, ID=12A

7.5

Gate to Source Charge

QGS

2.5

Gate to Drain Charge

QGD

3.0

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=1A, RG=9.1Ω,

VGS=10V (Fig. 1)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

(Note 1)

VSD

IS=12A, VGS=0V

1.2

Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Essentially independent of operating temperature

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