12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-737.a

PARAMETER

SYMBOL

RATINGS

UNIT

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

12

A

8.5

A

Pulsed (Note 2)

48

A

Power Dissipation

30

W

Derating Factor

0.2

W/°C

Avalanche Energy (Note 3)

100

mJ

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°C/W

Junction to Case

5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance

0.15 0.18

Ω

DYNAMIC PARAMETERS

Input Capacitance

430

pF

Output Capacitance

90

pF

Reverse Transfer Capacitance

20

pF