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MMDT3904L-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies |
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MMDT3904L-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MMDT3904 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-013.a ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient θJA 625 ℃ /W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS (Note 1) Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IB = 0 40 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 5.0 V Collector Cut-off Current ICEX VCE = 30V, VEB(OFF) = 3.0V 50 nA Base Cut-off Current IBL VCE = 30V, VEB(OFF) = 3.0V 50 nA ON CHARACTERISTICS (Note 1) IC = 100μA, VCE = 1.0V 40 IC = 1.0mA, VCE = 1.0V 70 IC = 10mA, VCE = 1.0V 100 300 IC = 50mA, VCE = 1.0V 60 DC Current Gain hFE IC = 100mA, VCE = 1.0V 30 IC = 10mA, IB = 1.0mA 0.20 V Collector-Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5.0mA 0.30 V IC = 10mA, IB = 1.0mA 0.65 0.85 V Base- Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5.0mA 0.95 V SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO VCB = 5.0V, f = 1.0MHz, IE = 0 4.0 pF Input Capacitance CIBO VEB = 0.5V, f = 1.0MHz, IC = 0 8.0 pF Input Impedance hIE 1.0 10 KΩ Voltage Feedback Ratio HRE 0.5 8.0 × 10 -4 Small Signal Current Gain HFE 100 400 Output Admittance HOE VCE = 10V, IC = 1.0mA, f = 1.0kHz 1.0 40 μS Current Gain-Bandwidth Product fT VCE = 20V, IC = 10mA, f = 100MHz 300 MHz Noise Figure NF VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz 5.0 dB SWITCHING CHARACTERISTICS Delay Time TD 35 ns Rise Time TR VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA 35 ns Storage Time TS 200 ns Fall Time TF VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 50 ns Note: 1. Short duration test pulse used to minimize self-heating. |
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