12N50L-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

12N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-528.c

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

500

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=6A

0.42 0.54

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

1450 1930 pF

Output Capacitance

COSS

198 265

Reverse Transfer Capacitance

CRSS

14.5

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=400V, ID=12A

(Note 1, 2)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=250V, ID=12A, RG=25Ω

(Note 1, 2)

Rise Time

120

Turn-OFF Delay Time

tD(OFF)

160

Fall-Time

105

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=12A, VGS=0V

1.5

Body Diode Reverse Recovery Time

trr

IS=12A, VGS=0V, dIF/dt=100A/µs

(Note 1)

154

Body Diode Reverse Recovery Charge

QRR

0.45

µC

Note:

1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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