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12P10G-TQ2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 12P10G-TQ2-R
功能描述  9.4A, 100V P-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

12P10G-TQ2-R 数据表(HTML) 2 Page - Unisonic Technologies

  12P10G-TQ2-R Datasheet HTML 1Page - Unisonic Technologies 12P10G-TQ2-R Datasheet HTML 2Page - Unisonic Technologies 12P10G-TQ2-R Datasheet HTML 3Page - Unisonic Technologies 12P10G-TQ2-R Datasheet HTML 4Page - Unisonic Technologies 12P10G-TQ2-R Datasheet HTML 5Page - Unisonic Technologies 12P10G-TQ2-R Datasheet HTML 6Page - Unisonic Technologies  
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12P10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-262.B
ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-9.4
A
Pulsed Drain Current (Note 2)
IDM
-37.6
A
Avalanche Current (Note 2)
IAR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
370
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.0
V/ns
Power Dissipation
TO-251/ TO-252
PD
50
W
TO-263
65
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-251/ TO-252
θJA
110
℃
/W
TO-263
62.5
Junction to Case
TO-251/ TO-252
θJC
2.5
℃
/W
TO-263
2.31



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