22N20

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-611.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

200

V

Gate-Source Voltage

±30

V

Drain Current

22

A

Pulsed (Note 2)

88

A

Avalanche Energy

Single Pulsed (Note 3)

250

mJ

TO-220

192

W

TO-252

83

Derate above 25°C

TO-220

1.53

W/°C

TO-252

0.67

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-252

110

Junction to Case

TO-220

0.65

°C/W

TO-252

1.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

V

Breakdown Voltage Temperature Coefficient

BV

△

0.25

V/°C

Drain-Source Leakage Current

1

µA

10

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-State Resistance

0.12 0.14

Ω

DYNAMIC PARAMETERS

Input Capacitance

1700 2200 pF

Output Capacitance

220

290

pF

Reverse Transfer Capacitance

30

40

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

27

35

nC

Gate to Source Charge

5.8

nC

Gate to Drain Charge

11.2

nC

Turn-ON Delay Time

(Note 1, 2)

35

80

ns

Rise Time

300

610

ns

Turn-OFF Delay Time

130

270

ns

Fall-Time

180

370

ns