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25N06L-TN3-R 数据表(PDF) 5 Page - Unisonic Technologies |
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25N06L-TN3-R 数据表(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() 25N06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R502-450.b SWITCHING TIME TEST CIRCUIT (Cont.) 12V D.U.T. PW 1kΩ 2200µF 2.7kΩ 47kΩ 100Ω 47kΩ 100nF IG=CONST VI=20V=VGMAX VG 1kΩ VDD Fig. 4 Gate Charge Test Circuit Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 3.3µF 1000µF VDD L=100µH D.U.T. RG + - G S D 85Ω B B A A B A D G S 25Ω MOS DIODE FAST DIODE |
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