SSM3K333RG-AE3-R datasheet(2/3 Pages) UTC

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SSM3K333R

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

VER.a

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

ID (Note 2)

Pulsed

IDM (Note 2)

Power Dissipation

PD (Note 3)

t=10s

Channel Temperature

TCH

150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The channel temperature should not exceed 150°C during use.

3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=10mA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=30V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS= VGS, ID=0.1mA

1.3

2.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=3A (Note 2)

25.7

mΩ

VGS=10V, ID=5A (Note 2)

18.7

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=15V, f=1.0MHz

436

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDD=15V, ID=6A

3.4

Gate to Source Charge

QGS

1.8

Gate to Drain Charge

QGD

1.0

Turn-ON Delay Time

tD(ON)

VDD=15V, ID=3A, VGS=0~4.5V,

RG=10Ω

Turn-OFF Delay Time

tD(OFF)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

ISD=6A, VGS=0V

0.85 1.2

Notes: 1. The channel temperature should not exceed 150°C during use.

2. Pulse test

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