TF202

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R210-001.F

PARAMETER

SYMBOL

RATING

UNIT

Gate Drain Voltage

-20

V

Gate Current

10

mA

Drain Current

1

mA

Power Dissipation

100

mW

Junction Temperature

150

°С

Storage Temperature

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Drain Breakdown Voltage

-20

V

Gate Source Cut off Voltage

-0.2

-0.6

-1.2

V

Drain Current

140

350

μA

Forward Transfer Admittance

lYFSl

0.5

1.2

mS

Input Capacitance

3.5

pF

Output Capacitance

0.65

pF

Voltage Gain

-3

dB

Reduced Voltage Characteristic

△

-1.2

-3.5

dB

Frequency Characteristic

△

f=1KHz to 110Hz

-1

dB

Input Resistance

f=1KHz

25

M

Ω

Output Resistance

f=1KHz

700

Ω

Total Harmonic distortion

THD

1

%

Output Noise Voltage

-110

dB

RANK

E4

E5

RANGE

140-240

210-350