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LHT676-R 数据表(PDF) 3 Page - Siemens Semiconductor Group |
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LHT676-R 数据表(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 6 page ![]() Semiconductor Group 3 LH T676 Kennwerte ( T A = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) I F = 10 mA λ peak 660 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) I F = 10 mA λ dom 645 nm Spektrale Bandbreite bei 50 % I rel max (typ.) Spectral bandwidth at 50 % I rel max (typ.) I F = 10 mA ∆λ 22 nm Abstrahlwinkel bei 50 % I V (Vollwinkel) Viewing angle at 50 % I V 2 ϕ 120 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) I F = 20 mA V F V F 1.85 2.3 V V Sperrstrom (typ.) Reverse current (max.) V R = 3 V I R I R 0.01 10 µA µA Kapazität (typ.) Capacitance V R = 0 V, f = 1 MHz C 0 30 pF Schaltzeiten: Switching times: I V from 10 % to 90 % (typ.) I V from 90 % to 10 % (typ.) I F = 100 mA, tP = 10 µs, RL = 50 Ω t r t f 100 100 ns ns Temperaturkoeffizient von I V bzw. ΦV, IF = 20 mA (typ.) Temperature coefficient of I V or ΦV, IF = 20 mA (typ.) TCI – 0.4 %/K Temperaturkoeffizient von V F, IF = 20 mA (typ.) Temperature coefficient of V F, IF = 20 mA (typ.) TCV – 3 mV/K Temperaturkoeffizient von λ peak, IF = 20 mA (typ.) Temperature coefficient of λ peak, IF = 20 mA (typ.) TCλ + 0.16 nm/K |
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